Tuned between metallic and insulating via axial electric means. Pristine monolayer, its out-of-plane polarization is tunable by an in-planeĮlectric field, the conducting states of the ferroelectric nanotube can thus be Metal-insulator transition depending on radiative polarization states.
With the flexoelectric polarization induced by bending, there occurs
When rolling a ferroelectric monolayer intoĪ nanotube, due to the coexistence of its intrinsic ferroelectric polarization Here, we introduce an entirely new TER mechanism toĬonstruct the nanotube ferroelectric tunnel junction with ferroelectric Have restrictions including low tunneling electroresistance (TER) effects andĬomplex heterostructures.
Realization of nanoscale nonvolatile memory devices due to their inherentĪdvantage of device miniaturization.
#Quick menu giant pdf#
Download a PDF of the paper titled Nanotube ferroelectric tunnel junctions with giant tunneling electroresistance ratio, by Jiu-Long Wang and 6 other authors Download PDF Abstract: Low-dimensional ferroelectric tunnel junctions are appealing for the
0 kommentar(er)
